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High-performance HfO(x)/AlO(y)-based resistive switching memory cross-point array fabricated by atomic layer deposition
Resistive switching memory cross-point arrays with TiN/HfO(x)/AlO(y)/Pt structure were fabricated. The bi-layered resistive switching films of 5-nm HfO(x) and 3-nm AlO(y) were deposited by atomic layer deposition (ALD). Excellent device performances such as low switching voltage, large resistance ra...
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| Publicat a: | Nanoscale Res Lett |
|---|---|
| Autors principals: | , , , , , , , |
| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Springer US
2015
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| Matèries: | |
| Accés en línia: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4385114/ https://ncbi.nlm.nih.gov/pubmed/25852366 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-015-0738-1 |
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