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Freestanding HfO(2 )grating fabricated by fast atom beam etching
We report here the fabrication of freestanding HfO(2 )grating by combining fast atom beam etching (FAB) of HfO(2 )film with dry etching of silicon substrate. HfO(2 )film is deposited onto silicon substrate by electron beam evaporator. The grating patterns are then defined by electron beam lithograph...
Tallennettuna:
| Päätekijät: | , , , |
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| Aineistotyyppi: | Artigo |
| Kieli: | Inglês |
| Julkaistu: |
Springer
2011
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| Aiheet: | |
| Linkit: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3211457/ https://ncbi.nlm.nih.gov/pubmed/21711898 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-6-367 |
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