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Demonstration of Logic Operations in High-Performance RRAM Crossbar Array Fabricated by Atomic Layer Deposition Technique
In this paper, resistive random access memory (RRAM)-based crossbar arrays with the cell structure of Pt/[AlO(y)/HfO(x)](m)/TiN were fabricated by using atomic layer deposition (ALD) technique. The RRAM devices in the arrays show excellent performances such as good uniformity and high reliability. B...
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| Wydane w: | Nanoscale Res Lett |
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| Główni autorzy: | , , , , , , |
| Format: | Artigo |
| Język: | Inglês |
| Wydane: |
Springer US
2017
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| Hasła przedmiotowe: | |
| Dostęp online: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5236033/ https://ncbi.nlm.nih.gov/pubmed/28091948 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-016-1807-9 |
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