Passivation mechanism of thermal atomic layer-deposited Al(2)O(3) films on silicon at different annealing temperatures

Thermal atomic layer-deposited (ALD) aluminum oxide (Al(2)O(3)) acquires high negative fixed charge density (Q(f)) and sufficiently low interface trap density after annealing, which enables excellent surface passivation for crystalline silicon. Q(f) can be controlled by varying the annealing tempera...

Deskribapen osoa

Gorde:
Xehetasun bibliografikoak
Egile Nagusiak: Zhao, Yan, Zhou, Chunlan, Zhang, Xiang, Zhang, Peng, Dou, Yanan, Wang, Wenjing, Cao, Xingzhong, Wang, Baoyi, Tang, Yehua, Zhou, Su
Formatua: Artigo
Hizkuntza:Inglês
Argitaratua: Springer 2013
Gaiak:
Nano Express
Sarrera elektronikoa:https://ncbi.nlm.nih.gov/pmc/articles/PMC3664088/
https://ncbi.nlm.nih.gov/pubmed/23452508
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-8-114
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