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Silicon diffusion control in atomic-layer-deposited Al(2)O(3)/La(2)O(3)/Al(2)O(3) gate stacks using an Al(2)O(3) barrier layer
In this study, the physical and electrical characteristics of Al(2)O(3)/La(2)O(3)/Al(2)O(3)/Si stack structures affected by the thickness of an Al(2)O(3) barrier layer between Si substrate and La(2)O(3) layer are investigated after a rapid thermal annealing (RTA) treatment. Time of flight secondary...
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| Publicado no: | Nanoscale Res Lett |
|---|---|
| Main Authors: | , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Springer US
2015
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4398676/ https://ncbi.nlm.nih.gov/pubmed/25897303 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-015-0842-2 |
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