LWIR Lateral Effect Position Sensitive HgCdTe Photodetector at 205 K
We describe in detail the construction and characterization of a Peltier-cooled long-wavelength infrared (LWIR) position-sensitive detector (PSD) based on the lateral effect. The device was recently reported for the first time to the authors’ knowledge. It is a modified PIN HgCdTe photodiode, formin...
I tiakina i:
| Ngā kaituhi matua: | , , |
|---|---|
| Hōputu: | Artigo |
| Reo: | Inglês |
| I whakaputaina: |
MDPI AG
2023-05-01
|
| Rangatū: | Sensors |
| Ngā marau: | |
| Urunga tuihono: | https://www.mdpi.com/1424-8220/23/10/4915 |
| Ngā Tūtohu: |
Kāore He Tūtohu, Me noho koe te mea tuatahi ki te tūtohu i tēnei pūkete!
|