LWIR Lateral Effect Position Sensitive HgCdTe Photodetector at 205 K
We describe in detail the construction and characterization of a Peltier-cooled long-wavelength infrared (LWIR) position-sensitive detector (PSD) based on the lateral effect. The device was recently reported for the first time to the authors’ knowledge. It is a modified PIN HgCdTe photodiode, formin...
Gorde:
| Egile Nagusiak: | , , |
|---|---|
| Formatua: | Artigo |
| Hizkuntza: | Inglês |
| Argitaratua: |
MDPI AG
2023-05-01
|
| Saila: | Sensors |
| Gaiak: | |
| Sarrera elektronikoa: | https://www.mdpi.com/1424-8220/23/10/4915 |
| Etiketak: |
Etiketarik gabe, Izan zaitez lehena erregistro honi etiketa jartzen!
|