LWIR Lateral Effect Position Sensitive HgCdTe Photodetector at 205 K
We describe in detail the construction and characterization of a Peltier-cooled long-wavelength infrared (LWIR) position-sensitive detector (PSD) based on the lateral effect. The device was recently reported for the first time to the authors’ knowledge. It is a modified PIN HgCdTe photodiode, formin...
Saved in:
| Main Authors: | , , |
|---|---|
| Format: | Artigo |
| Language: | Inglês |
| Published: |
MDPI AG
2023-05-01
|
| Series: | Sensors |
| Subjects: | |
| Online Access: | https://www.mdpi.com/1424-8220/23/10/4915 |
| Tags: |
No Tags, Be the first to tag this record!
|