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LWIR Lateral Effect Position Sensitive HgCdTe Photodetector at 205 K

We describe in detail the construction and characterization of a Peltier-cooled long-wavelength infrared (LWIR) position-sensitive detector (PSD) based on the lateral effect. The device was recently reported for the first time to the authors’ knowledge. It is a modified PIN HgCdTe photodiode, formin...

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Principais autores: Jarosław Pawluczyk, Mateusz Żbik, Józef Piotrowski
Format: Artigo
Sprog:Inglês
Udgivet: MDPI AG 2023-05-01
Serier:Sensors
Fag:
LWIR
HgCdTe
PSD
position-sensing detector
photodetector
lateral effect
Online adgang:https://www.mdpi.com/1424-8220/23/10/4915
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