LWIR Lateral Effect Position Sensitive HgCdTe Photodetector at 205 K
We describe in detail the construction and characterization of a Peltier-cooled long-wavelength infrared (LWIR) position-sensitive detector (PSD) based on the lateral effect. The device was recently reported for the first time to the authors’ knowledge. It is a modified PIN HgCdTe photodiode, formin...
Tallennettuna:
| Päätekijät: | , , |
|---|---|
| Aineistotyyppi: | Artigo |
| Kieli: | Inglês |
| Julkaistu: |
MDPI AG
2023-05-01
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| Sarja: | Sensors |
| Aiheet: | |
| Linkit: | https://www.mdpi.com/1424-8220/23/10/4915 |
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