Current Conduction Mechanisms in n-type a-SiGe:H/p-type c-Si Heterojunctions
n-type a-SiGe:H/p-type c-Si heterojunctions, fabricated with two different base doping concentrations (7×1017 and 5×1018 cm-3) and two thicknesses (37 and 200 nm) for the n-type a-SiGe:H film, were electrically characterized. The current transport mechanisms were determined by analyzing the temperat...
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| Publicado no: | Superficies y vacío |
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| Principais autores: | , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C.
2008
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| Acesso em linha: | https://www.redalyc.org/articulo.oa?id=94215160001 |
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