Morphological Study of Polycrystalline SiGe Alloy Deposited by Vertical LPCVD
As device dimensions shrink to the deep-submicron scale, new challenges arises from the very small scaleused and even poly crystalline silicon (poly-Si) presents problems as gate electrode. The use of SiGe as gate materialcan present many advantages over the poly-Si, as it leads to a lower boron pen...
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| Publié dans: | Brazilian Journal of Physics |
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| Auteurs principaux: | , , , , |
| Format: | Artigo |
| Langue: | Inglês |
| Publié: |
Sociedade Brasileira de Física
2006
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| Sujets: | |
| Accès en ligne: | https://www.redalyc.org/articulo.oa?id=46436363 |
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