Atomic‐scale strain analysis for advanced Si/SiGe heterostructure by using transmission electron microscopy
Abstract Three‐dimensional stacked transistors based on Si/SiGe heterojunction are a potential candidate for future low‐power and high‐performance computing in integrated circuits. Observing and accurately measuring strain in Si/SiGe heterojunctions is critical to increasing carrier mobility and imp...
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| Autori principali: | , , , , , , , , , |
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| Natura: | Artigo |
| Lingua: | Inglês |
| Pubblicazione: |
Wiley
2024-05-01
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| Serie: | Electron |
| Soggetti: | |
| Accesso online: | https://doi.org/10.1002/elt2.32 |
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