SiGe field effect transistors
Recent and encouraging developments in Schot- tky and MOS gated Si/SiGe field effect transistors are sur- veyed. Circuit applications are now beginning to be investi- gated. The authors discuss some of this work and consider future prospects for the role of SiGe field effect devices in mobile commu...
में बचाया:
| मुख्य लेखकों: | , |
|---|---|
| स्वरूप: | Artigo |
| भाषा: | Inglês |
| प्रकाशित: |
National Institute of Telecommunications
2001-03-01
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| श्रृंखला: | Journal of Telecommunications and Information Technology |
| विषय: | |
| ऑनलाइन पहुंच: | https://jtit.pl/jtit/article/view/49 |
| टैग: |
कोई टैग नहीं, इस रिकॉर्ड को टैग करने वाले पहले व्यक्ति बनें!
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