Critical modeling issues of SiGe semiconductor devices
We present the state-of-the-art in simulation of silicon-germanium (SiGe) semiconductor devices. The work includes a detailed comparison of device simulators and current transport models. Among the critical modeling issues addressed in the paper, special attention is focused on the description of t...
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| Автори: | , |
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| Формат: | Artigo |
| Мова: | Inglês |
| Опубліковано: |
National Institute of Telecommunications
2004-03-01
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| Серія: | Journal of Telecommunications and Information Technology |
| Предмети: | |
| Онлайн доступ: | https://jtit.pl/jtit/article/view/233 |
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