Critical modeling issues of SiGe semiconductor devices
We present the state-of-the-art in simulation of silicon-germanium (SiGe) semiconductor devices. The work includes a detailed comparison of device simulators and current transport models. Among the critical modeling issues addressed in the paper, special attention is focused on the description of t...
Na minha lista:
| Principais autores: | , |
|---|---|
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
National Institute of Telecommunications
2004-03-01
|
| coleção: | Journal of Telecommunications and Information Technology |
| Assuntos: | |
| Acesso em linha: | https://jtit.pl/jtit/article/view/233 |
| Tags: |
Sem tags, seja o primeiro a adicionar uma tag!
|