SiGe field effect transistors
Recent and encouraging developments in Schot- tky and MOS gated Si/SiGe field effect transistors are sur- veyed. Circuit applications are now beginning to be investi- gated. The authors discuss some of this work and consider future prospects for the role of SiGe field effect devices in mobile commu...
Gardado en:
| Principais autores: | , |
|---|---|
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado: |
National Institute of Telecommunications
2001-03-01
|
| Series: | Journal of Telecommunications and Information Technology |
| Assuntos: | |
| Acceso en liña: | https://jtit.pl/jtit/article/view/49 |
| Tags: |
Sen Etiquetas, Sexa o primeiro en etiquetar este rexistro!
|