New device applications of SiGe heterostructures
SiGe heterostructure bipolar transistors are well developed and some of them are now commercially available, whilemany efforts are being paid on field-effect transistors. Extremely high mobility is demonstrated both for n- and p-channeltransistors, which is brought by strain effects, and new devices...
保存先:
| 出版年: | Superficies y vacío |
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| 第一著者: | |
| フォーマット: | Artigo |
| 言語: | Inglês |
| 出版事項: |
Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C.
2003
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| 主題: | |
| オンライン･アクセス: | https://www.redalyc.org/articulo.oa?id=94216401 |
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