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New device applications of SiGe heterostructures

SiGe heterostructure bipolar transistors are well developed and some of them are now commercially available, whilemany efforts are being paid on field-effect transistors. Extremely high mobility is demonstrated both for n- and p-channeltransistors, which is brought by strain effects, and new devices...

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Détails bibliographiques
Publié dans:Superficies y vacío
Auteur principal: Shiraki Yasuhiro
Format: Artigo
Langue:Inglês
Publié: Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. 2003
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Accès en ligne:https://www.redalyc.org/articulo.oa?id=94216401
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