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Electrical characterization of planarized a-SiGe:H Thin-film Transistors
In this work the electrical characterization of n-channel a-SiGe:H TFTs with planarized gate electrode is presented. The planarized a-SiGe:H TFTs were fabricated at 200±C on corning glass substrate. The devices exhibit a subthreshold slope of 0.56 V/Decade, an on/off-current ratio approximately of 1...
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| 出版年: | Revista Mexicana de Física |
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| 主要な著者: | , , |
| フォーマット: | Artigo |
| 言語: | Inglês |
| 出版事項: |
Sociedad Mexicana de Física A.C.
2013
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| 主題: | |
| オンライン･アクセス: | https://www.redalyc.org/articulo.oa?id=57025669010 |
| タグ: |
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