Electrical characterization of planarized a-SiGe:H Thin-film Transistors
In this work the electrical characterization of n-channel a-SiGe:H TFTs with planarized gate electrode is presented. The planarized a-SiGe:H TFTs were fabricated at 200±C on corning glass substrate. The devices exhibit a subthreshold slope of 0.56 V/Decade, an on/off-current ratio approximately of 1...
Na minha lista:
| 發表在: | Revista Mexicana de Física |
|---|---|
| Principais autores: | , , |
| 格式: | Artigo |
| 語言: | Inglês |
| 出版: |
Sociedad Mexicana de Física A.C.
2013
|
| 主題: | |
| 在線閱讀: | https://www.redalyc.org/articulo.oa?id=57025669010 |
| 標簽: |
沒有標簽, 成為第一個標記此記錄!
|