ロード中...

Electrical characterization of planarized a-SiGe:H Thin-film Transistors

In this work the electrical characterization of n-channel a-SiGe:H TFTs with planarized gate electrode is presented. The planarized a-SiGe:H TFTs were fabricated at 200±C on corning glass substrate. The devices exhibit a subthreshold slope of 0.56 V/Decade, an on/off-current ratio approximately of 1...

詳細記述

保存先:
書誌詳細
出版年:Revista Mexicana de Física
主要な著者: M. Dominguez, P. Rosales, A. Torresa
フォーマット: Artigo
言語:Inglês
出版事項: Sociedad Mexicana de Física A.C. 2013
主題:
low
オンライン・アクセス:https://www.redalyc.org/articulo.oa?id=57025669010
タグ: タグ追加
タグなし, このレコードへの初めてのタグを付けませんか!