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Electrical characterization of planarized a-SiGe:H Thin-film Transistors

In this work the electrical characterization of n-channel a-SiGe:H TFTs with planarized gate electrode is presented. The planarized a-SiGe:H TFTs were fabricated at 200±C on corning glass substrate. The devices exhibit a subthreshold slope of 0.56 V/Decade, an on/off-current ratio approximately of 1...

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Publié dans:Revista Mexicana de Física
Auteurs principaux: M. Dominguez, P. Rosales, A. Torresa
Format: Artigo
Langue:Inglês
Publié: Sociedad Mexicana de Física A.C. 2013
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Accès en ligne:https://www.redalyc.org/articulo.oa?id=57025669010
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