Electrical characterization of planarized a-SiGe:H Thin-film Transistors

In this work the electrical characterization of n-channel a-SiGe:H TFTs with planarized gate electrode is presented. The planarized a-SiGe:H TFTs were fabricated at 200±C on corning glass substrate. The devices exhibit a subthreshold slope of 0.56 V/Decade, an on/off-current ratio approximately of 1...

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Detaylı Bibliyografya
Yayımlandı:Revista Mexicana de Física
Asıl Yazarlar: M. Dominguez, P. Rosales, A. Torresa
Materyal Türü: Artigo
Dil:Inglês
Baskı/Yayın Bilgisi: Sociedad Mexicana de Física A.C. 2013
Konular:
Física, Astronomía y Matemáticas
low
Thin
spin
spice
on glass
Online Erişim:https://www.redalyc.org/articulo.oa?id=57025669010
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