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Electrical characterization of planarized a-SiGe:H Thin-film Transistors
In this work the electrical characterization of n-channel a-SiGe:H TFTs with planarized gate electrode is presented. The planarized a-SiGe:H TFTs were fabricated at 200±C on corning glass substrate. The devices exhibit a subthreshold slope of 0.56 V/Decade, an on/off-current ratio approximately of 1...
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| Опубликовано в: : | Revista Mexicana de Física |
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| Главные авторы: | , , |
| Формат: | Artigo |
| Язык: | Inglês |
| Опубликовано: |
Sociedad Mexicana de Física A.C.
2013
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| Предметы: | |
| Online-ссылка: | https://www.redalyc.org/articulo.oa?id=57025669010 |
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