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Impact of planarized gate electrode in bottom-gate thin-film transistors
In this work, the fabrication of bottom-gate TFTs with unplanarized and planarized gate electrode are reported, as well simulations of theimpact of the gate planarization in the TFTs are presented. Previously in literature, a reduction of the contact resistance has been attributed tothis planarized...
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| Pubblicato in: | Revista Mexicana de Física |
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| Autori principali: | , , , , , , |
| Natura: | Artigo |
| Lingua: | Inglês |
| Pubblicazione: |
Sociedad Mexicana de Física A.C.
2016
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| Soggetti: | |
| Accesso online: | https://www.redalyc.org/articulo.oa?id=57045452007 |
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