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Impact of planarized gate electrode in bottom-gate thin-film transistors
In this work, the fabrication of bottom-gate TFTs with unplanarized and planarized gate electrode are reported, as well simulations of theimpact of the gate planarization in the TFTs are presented. Previously in literature, a reduction of the contact resistance has been attributed tothis planarized...
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| Publicat a: | Revista Mexicana de Física |
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| Autors principals: | , , , , , , |
| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Sociedad Mexicana de Física A.C.
2016
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| Matèries: | |
| Accés en línia: | https://www.redalyc.org/articulo.oa?id=57045452007 |
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