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Impact of planarized gate electrode in bottom-gate thin-film transistors

In this work, the fabrication of bottom-gate TFTs with unplanarized and planarized gate electrode are reported, as well simulations of theimpact of the gate planarization in the TFTs are presented. Previously in literature, a reduction of the contact resistance has been attributed tothis planarized...

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Bibliografske podrobnosti
izdano v:Revista Mexicana de Física
Main Authors: M.A. Domínguez, P. Rosales, A. Torres, F. Flores, J.A. Luna, S. Alcantara, M. Moreno
Format: Artigo
Jezik:Inglês
Izdano: Sociedad Mexicana de Física A.C. 2016
Teme:
Online dostop:https://www.redalyc.org/articulo.oa?id=57045452007
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