Thin-film transistors based on zinc oxide films by ultrasonic spray pyrolysis

The application of Zinc Oxide (ZnO) films by ultrasonic spray pyrolysis at 250, 300 and 450 ± C as active layer in thin-film Transistors (TFTs) is presented. The performance of the devices shows an unexpected behavior in function of the deposition temperature. The ZnO films were deposited from 0.2 M...

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Wedi'i Gadw mewn:
Manylion Llyfryddiaeth
Cyhoeddwyd yn:Revista Mexicana de Física
Prif Awduron: M.A. Dominguez-Jimenez, F. Flores-Gracia, A. Luna-Flores, J. Martinez-Juarez, J.A. Luna-Lopez, S. Alcantara-Iniesta, P. Rosales-Quintero, C. Reyes-Betanzo
Fformat: Artigo
Iaith:Inglês
Cyhoeddwyd: Sociedad Mexicana de Física A.C. 2015
Pynciau:
Física, Astronomía y Matemáticas
ZnO
electrical properties
thin film transistors
Mynediad Ar-lein:https://www.redalyc.org/articulo.oa?id=57036862009
Tagiau: Ychwanegu Tag
Dim Tagiau, Byddwch y cyntaf i dagio'r cofnod hwn!

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