Thin-film transistors based on zinc oxide films by ultrasonic spray pyrolysis
The application of Zinc Oxide (ZnO) films by ultrasonic spray pyrolysis at 250, 300 and 450 ± C as active layer in thin-film Transistors (TFTs) is presented. The performance of the devices shows an unexpected behavior in function of the deposition temperature. The ZnO films were deposited from 0.2 M...
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| Vydáno v: | Revista Mexicana de Física |
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| Hlavní autoři: | , , , , , , , |
| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
Sociedad Mexicana de Física A.C.
2015
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| Témata: | |
| On-line přístup: | https://www.redalyc.org/articulo.oa?id=57036862009 |
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