Current Conduction Mechanisms in n-type a-SiGe:H/p-type c-Si Heterojunctions

n-type a-SiGe:H/p-type c-Si heterojunctions, fabricated with two different base doping concentrations (7×1017 and 5×1018 cm-3) and two thicknesses (37 and 200 nm) for the n-type a-SiGe:H film, were electrically characterized. The current transport mechanisms were determined by analyzing the temperat...

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Detalles Bibliográficos

Publicado en:	Superficies y vacío
Principais autores:	P. Rosales-Quintero, A. Torres-Jacome, F. J. De la Hidalga-Wade, C. Zúñiga-Islas, W. Calleja-Arriaga, C. Reyes-Betanzo
Formato:	Artigo
Idioma:	Inglês
Publicado:	Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. 2008
Assuntos:	Física, Astronomía y Matemáticas
Acceso en liña:	https://www.redalyc.org/articulo.oa?id=94215160001
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