Current Conduction Mechanisms in n-type a-SiGe:H/p-type c-Si Heterojunctions

n-type a-SiGe:H/p-type c-Si heterojunctions, fabricated with two different base doping concentrations (7×1017 and 5×1018 cm-3) and two thicknesses (37 and 200 nm) for the n-type a-SiGe:H film, were electrically characterized. The current transport mechanisms were determined by analyzing the temperat...

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Pubblicato in:	Superficies y vacío
Autori principali:	P. Rosales-Quintero, A. Torres-Jacome, F. J. De la Hidalga-Wade, C. Zúñiga-Islas, W. Calleja-Arriaga, C. Reyes-Betanzo
Natura:	Artigo
Lingua:	Inglês
Pubblicazione:	Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. 2008
Soggetti:	Física, Astronomía y Matemáticas
Accesso online:	https://www.redalyc.org/articulo.oa?id=94215160001
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