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Design and Investigation of the High Performance Doping-Less TFET with Ge/Si(0.6)Ge(0.4)/Si Heterojunction
A high performance doping-less tunneling field effect transistor with Ge/Si(0.6)Ge(0.4)/Si heterojunction (H-DLTFET) is proposed in this paper. Compared to the conventional doping-less tunneling field effect transistor (DLTFET), the source and channel regions of H-DLTFET respectively use the germani...
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| Publicado no: | Micromachines (Basel) |
|---|---|
| Main Authors: | , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
MDPI
2019
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6631409/ https://ncbi.nlm.nih.gov/pubmed/31238602 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/mi10060424 |
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