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Design of High Performance Si/SiGe Heterojunction Tunneling FETs with a T-Shaped Gate

In this paper, a new Si/SiGe heterojunction tunneling field-effect transistor with a T-shaped gate (HTG-TFET) is proposed and investigated by Silvaco-Atlas simulation. The two source regions of the HTG-TFET are placed on both sides of the gate to increase the tunneling area. The T-shaped gate is des...

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Detalhes bibliográficos
Publicado no:Nanoscale Res Lett
Main Authors: Li, Wei, Liu, Hongxia, Wang, Shulong, Chen, Shupeng, Yang, Zhaonian
Formato: Artigo
Idioma:Inglês
Publicado em: Springer US 2017
Assuntos:
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC5355408/
https://ncbi.nlm.nih.gov/pubmed/28314362
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-017-1958-3
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