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Design of High Performance Si/SiGe Heterojunction Tunneling FETs with a T-Shaped Gate
In this paper, a new Si/SiGe heterojunction tunneling field-effect transistor with a T-shaped gate (HTG-TFET) is proposed and investigated by Silvaco-Atlas simulation. The two source regions of the HTG-TFET are placed on both sides of the gate to increase the tunneling area. The T-shaped gate is des...
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| Veröffentlicht in: | Nanoscale Res Lett |
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| Hauptverfasser: | , , , , |
| Format: | Artigo |
| Sprache: | Inglês |
| Veröffentlicht: |
Springer US
2017
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| Schlagworte: | |
| Online Zugang: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5355408/ https://ncbi.nlm.nih.gov/pubmed/28314362 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-017-1958-3 |
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