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A Novel Dopingless Fin-Shaped SiGe Channel TFET with Improved Performance
In this paper, a dopingless fin-shaped SiGe channel TFET (DF-TFET) is proposed and studied. To form a high-efficiency dopingless line tunneling junction, a fin-shaped SiGe channel and a gate/source overlap are induced. Through these methods, the DF-TFET with high on-state current, switching ratio of...
שמור ב:
| הוצא לאור ב: | Nanoscale Res Lett |
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| Main Authors: | , , , , , |
| פורמט: | Artigo |
| שפה: | Inglês |
| יצא לאור: |
Springer US
2020
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| נושאים: | |
| גישה מקוונת: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7568735/ https://ncbi.nlm.nih.gov/pubmed/33068207 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-020-03429-3 |
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