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A Novel Dopingless Fin-Shaped SiGe Channel TFET with Improved Performance
In this paper, a dopingless fin-shaped SiGe channel TFET (DF-TFET) is proposed and studied. To form a high-efficiency dopingless line tunneling junction, a fin-shaped SiGe channel and a gate/source overlap are induced. Through these methods, the DF-TFET with high on-state current, switching ratio of...
Αποθηκεύτηκε σε:
| Τόπος έκδοσης: | Nanoscale Res Lett |
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| Κύριοι συγγραφείς: | , , , , , |
| Μορφή: | Artigo |
| Γλώσσα: | Inglês |
| Έκδοση: |
Springer US
2020
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| Θέματα: | |
| Διαθέσιμο Online: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7568735/ https://ncbi.nlm.nih.gov/pubmed/33068207 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-020-03429-3 |
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