Yüklüyor......
A Novel Dopingless Fin-Shaped SiGe Channel TFET with Improved Performance
In this paper, a dopingless fin-shaped SiGe channel TFET (DF-TFET) is proposed and studied. To form a high-efficiency dopingless line tunneling junction, a fin-shaped SiGe channel and a gate/source overlap are induced. Through these methods, the DF-TFET with high on-state current, switching ratio of...
Kaydedildi:
| Yayımlandı: | Nanoscale Res Lett |
|---|---|
| Asıl Yazarlar: | , , , , , |
| Materyal Türü: | Artigo |
| Dil: | Inglês |
| Baskı/Yayın Bilgisi: |
Springer US
2020
|
| Konular: | |
| Online Erişim: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7568735/ https://ncbi.nlm.nih.gov/pubmed/33068207 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-020-03429-3 |
| Etiketler: |
Etiketle
Etiket eklenmemiş, İlk siz ekleyin!
|