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Remote Doping Effects of Indium–Gallium–Zinc Oxide Thin-Film Transistors by Silane-Based Self-Assembled Monolayers

Oxide thin-film transistors (TFTs), including indium–gallium–zinc oxide (IGZO) TFTs, have been widely investigated because of their excellent properties, such as compatibility with flexible substrates, high carrier mobility, and easy-to-fabricate TFT processes. However, to increase the use of oxide...

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Detalhes bibliográficos
Publicado no:Micromachines (Basel)
Main Authors: Seo, Juhyung, Yoo, Hocheon
Formato: Artigo
Idioma:Inglês
Publicado em: MDPI 2021
Assuntos:
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC8145249/
https://ncbi.nlm.nih.gov/pubmed/33922430
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/mi12050481
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