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Study of the Correlation between the Amorphous Indium-Gallium-Zinc Oxide Film Quality and the Thin-Film Transistor Performance

In this work, we performed a systematic study of the physical properties of amorphous Indium–Gallium–Zinc Oxide (a-IGZO) films prepared under various deposition pressures, O [Formula: see text] /(Ar+O [Formula: see text]) flow ratios, and annealing temperatures. X-ray reflectivity (XRR) and microwav...

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Detalhes bibliográficos
Publicado no:Nanomaterials (Basel)
Main Authors: Hu, Shiben, Lu, Kuankuan, Ning, Honglong, Yao, Rihui, Gong, Yanfen, Pan, Zhangxu, Guo, Chan, Wang, Jiantai, Pang, Chao, Gong, Zheng, Peng, Junbiao
Formato: Artigo
Idioma:Inglês
Publicado em: MDPI 2021
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Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC7922092/
https://ncbi.nlm.nih.gov/pubmed/33670767
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/nano11020522
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