載入...

Channel Shape Effects on Device Instability of Amorphous Indium–Gallium–Zinc Oxide Thin Film Transistors

Channel shape dependency on device instability for amorphous indium–gallium–zinc oxide (a-IGZO) thin film transistors (TFTs) is investigated by using various channel shape devices along with systematic electrical characterization including DC I-V characeristics and bias temperature stress tests. a-I...

全面介紹

Na minha lista:
書目詳細資料
發表在:Micromachines (Basel)
Main Authors: Seo, Seung Gi, Yu, Seung Jae, Kim, Seung Yeob, Jeong, Jinheon, Jin, Sung Hun
格式: Artigo
語言:Inglês
出版: MDPI 2020
主題:
在線閱讀:https://ncbi.nlm.nih.gov/pmc/articles/PMC7822037/
https://ncbi.nlm.nih.gov/pubmed/33375000
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/mi12010002
標簽: 添加標簽
沒有標簽, 成為第一個標記此記錄!