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Channel Shape Effects on Device Instability of Amorphous Indium–Gallium–Zinc Oxide Thin Film Transistors
Channel shape dependency on device instability for amorphous indium–gallium–zinc oxide (a-IGZO) thin film transistors (TFTs) is investigated by using various channel shape devices along with systematic electrical characterization including DC I-V characeristics and bias temperature stress tests. a-I...
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| Publicat a: | Micromachines (Basel) |
|---|---|
| Autors principals: | , , , , |
| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
MDPI
2020
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| Matèries: | |
| Accés en línia: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7822037/ https://ncbi.nlm.nih.gov/pubmed/33375000 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/mi12010002 |
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