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Channel Shape Effects on Device Instability of Amorphous Indium–Gallium–Zinc Oxide Thin Film Transistors

Channel shape dependency on device instability for amorphous indium–gallium–zinc oxide (a-IGZO) thin film transistors (TFTs) is investigated by using various channel shape devices along with systematic electrical characterization including DC I-V characeristics and bias temperature stress tests. a-I...

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Bibliografski detalji
Izdano u:Micromachines (Basel)
Glavni autori: Seo, Seung Gi, Yu, Seung Jae, Kim, Seung Yeob, Jeong, Jinheon, Jin, Sung Hun
Format: Artigo
Jezik:Inglês
Izdano: MDPI 2020
Teme:
Online pristup:https://ncbi.nlm.nih.gov/pmc/articles/PMC7822037/
https://ncbi.nlm.nih.gov/pubmed/33375000
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/mi12010002
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