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High Mobility Thin Film Transistors Based on Amorphous Indium Zinc Tin Oxide
Top-contact bottom-gate thin film transistors (TFTs) with zinc-rich indium zinc tin oxide (IZTO) active layer were prepared at room temperature by radio frequency magnetron sputtering. Sintered ceramic target was prepared and used for deposition from oxide powder mixture having the molar ratio of In...
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| Main Authors: | , , , , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
MDPI AG
2017-06-01
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| Colecção: | Materials |
| Assuntos: | |
| Acesso em linha: | http://www.mdpi.com/1996-1944/10/7/702 |
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