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Electric Field-aided Selective Activation for Indium-Gallium-Zinc-Oxide Thin Film Transistors
A new technique is proposed for the activation of low temperature amorphous InGaZnO thin film transistor (a-IGZO TFT) backplanes through application of a bias voltage and annealing at 130 °C simultaneously. In this ‘electrical activation’, the effects of annealing under bias are selectively focused...
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| Publicado no: | Sci Rep |
|---|---|
| Main Authors: | , , , , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Nature Publishing Group
2016
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5057139/ https://ncbi.nlm.nih.gov/pubmed/27725695 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep35044 |
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