Wordt geladen...
Electric Field-aided Selective Activation for Indium-Gallium-Zinc-Oxide Thin Film Transistors
A new technique is proposed for the activation of low temperature amorphous InGaZnO thin film transistor (a-IGZO TFT) backplanes through application of a bias voltage and annealing at 130 °C simultaneously. In this ‘electrical activation’, the effects of annealing under bias are selectively focused...
Bewaard in:
| Gepubliceerd in: | Sci Rep |
|---|---|
| Hoofdauteurs: | , , , , , , , , |
| Formaat: | Artigo |
| Taal: | Inglês |
| Gepubliceerd in: |
Nature Publishing Group
2016
|
| Onderwerpen: | |
| Online toegang: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5057139/ https://ncbi.nlm.nih.gov/pubmed/27725695 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep35044 |
| Tags: |
Voeg label toe
Geen labels, Wees de eerste die dit record labelt!
|