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Effects of helium annealing in low-temperature and solution-processed amorphous indium-gallium-zinc-oxide thin-film transistors
In this paper, low-temperature, solution-processed amorphous indium-gallium-zinc-oxide thin-film transistors (a-IGZO TFTs) with annealing temperatures as low as 300°C were fabricated using different annealing gases of He, N2, and O2 and their electrical characteristics and long-term stability were a...
Tallennettuna:
| Päätekijät: | , , |
|---|---|
| Aineistotyyppi: | Artigo |
| Kieli: | Inglês |
| Julkaistu: |
AIP Publishing LLC
2019-04-01
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| Sarja: | AIP Advances |
| Linkit: | http://dx.doi.org/10.1063/1.5092642 |
| Tagit: |
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