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Effects of helium annealing in low-temperature and solution-processed amorphous indium-gallium-zinc-oxide thin-film transistors
In this paper, low-temperature, solution-processed amorphous indium-gallium-zinc-oxide thin-film transistors (a-IGZO TFTs) with annealing temperatures as low as 300°C were fabricated using different annealing gases of He, N2, and O2 and their electrical characteristics and long-term stability were a...
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| Autori principali: | , , |
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| Natura: | Artigo |
| Lingua: | Inglês |
| Pubblicazione: |
AIP Publishing LLC
2019-04-01
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| Serie: | AIP Advances |
| Accesso online: | http://dx.doi.org/10.1063/1.5092642 |
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