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Facile fabrication of wire-type indium gallium zinc oxide thin-film transistors applicable to ultrasensitive flexible sensors
We fabricated wire-type indium gallium zinc oxide (IGZO) thin-film transistors (TFTs) using a self-formed cracked template based on a lift-off process. The electrical characteristics of wire-type IGZO TFTs could be controlled by changing the width and density of IGZO wires through varying the coatin...
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| Publicat a: | Sci Rep |
|---|---|
| Autors principals: | , , , , , |
| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Nature Publishing Group UK
2018
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| Matèries: | |
| Accés en línia: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5882893/ https://ncbi.nlm.nih.gov/pubmed/29615757 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-018-23892-4 |
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