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Study of the Correlation between the Amorphous Indium-Gallium-Zinc Oxide Film Quality and the Thin-Film Transistor Performance
In this work, we performed a systematic study of the physical properties of amorphous Indium–Gallium–Zinc Oxide (a-IGZO) films prepared under various deposition pressures, O [Formula: see text] /(Ar+O [Formula: see text]) flow ratios, and annealing temperatures. X-ray reflectivity (XRR) and microwav...
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| Publicado no: | Nanomaterials (Basel) |
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| Main Authors: | , , , , , , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
MDPI
2021
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7922092/ https://ncbi.nlm.nih.gov/pubmed/33670767 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/nano11020522 |
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