Загрузка...
Remote Doping Effects of Indium–Gallium–Zinc Oxide Thin-Film Transistors by Silane-Based Self-Assembled Monolayers
Oxide thin-film transistors (TFTs), including indium–gallium–zinc oxide (IGZO) TFTs, have been widely investigated because of their excellent properties, such as compatibility with flexible substrates, high carrier mobility, and easy-to-fabricate TFT processes. However, to increase the use of oxide...
Сохранить в:
| Опубликовано в: : | Micromachines (Basel) |
|---|---|
| Главные авторы: | , |
| Формат: | Artigo |
| Язык: | Inglês |
| Опубликовано: |
MDPI
2021
|
| Предметы: | |
| Online-ссылка: | https://ncbi.nlm.nih.gov/pmc/articles/PMC8145249/ https://ncbi.nlm.nih.gov/pubmed/33922430 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/mi12050481 |
| Метки: |
Добавить метку
Нет меток, Требуется 1-ая метка записи!
|