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Low-Concentration Indium Doping in Solution-Processed Zinc Oxide Films for Thin-Film Transistors
We investigated the influence of low-concentration indium (In) doping on the chemical and structural properties of solution-processed zinc oxide (ZnO) films and the electrical characteristics of bottom-gate/top-contact In-doped ZnO thin-film transistors (TFTs). The thermogravimetry and differential...
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| Foilsithe in: | Materials (Basel) |
|---|---|
| Main Authors: | , , , , |
| Formáid: | Artigo |
| Teanga: | Inglês |
| Foilsithe: |
MDPI
2017
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| Ábhair: | |
| Rochtain Ar Líne: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5578246/ https://ncbi.nlm.nih.gov/pubmed/28773242 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma10080880 |
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