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Investigation of the Electrical Characteristics of Bilayer ZnO/In(2)O(3) Thin-Film Transistors Fabricated by Solution Processing
Metal-oxide thin-film transistors (TFTs) have been developed as promising candidates for use in various electronic and optoelectronic applications. In this study, we fabricated bilayer zinc oxide (ZnO)/indium oxide (In(2)O(3)) TFTs by using the sol-gel solution process, and investigated the structur...
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| 出版年: | Materials (Basel) |
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| 主要な著者: | , , , , |
| フォーマット: | Artigo |
| 言語: | Inglês |
| 出版事項: |
MDPI
2018
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| 主題: | |
| オンライン･アクセス: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6266193/ https://ncbi.nlm.nih.gov/pubmed/30373128 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma11112103 |
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