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Schottky Barrier Height and Image Force Lowering in Monolayer MoS(2) Field Effect Transistors

Understanding the nature of the barrier height in a two-dimensional semiconductor/metal interface is an important step for embedding layered materials in future electronic devices. We present direct measurement of the Schottky barrier height and its lowering in the transition metal dichalcogenide (T...

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Bibliografiske detaljer
Udgivet i:Nanomaterials (Basel)
Main Authors: Vaknin, Yonatan, Dagan, Ronen, Rosenwaks, Yossi
Format: Artigo
Sprog:Inglês
Udgivet: MDPI 2020
Fag:
Online adgang:https://ncbi.nlm.nih.gov/pmc/articles/PMC7761329/
https://ncbi.nlm.nih.gov/pubmed/33255993
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/nano10122346
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