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Monolayer MoS(2) field effect transistor with low Schottky barrier height with ferromagnetic metal contacts
Two-dimensional MoS(2) has emerged as promising material for nanoelectronics and spintronics due to its exotic properties. However, high contact resistance at metal semiconductor MoS(2) interface still remains an open issue. Here, we report electronic properties of field effect transistor devices us...
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| Publicado no: | Sci Rep |
|---|---|
| Main Authors: | , , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Nature Publishing Group UK
2019
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6863907/ https://ncbi.nlm.nih.gov/pubmed/31745127 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-019-53367-z |
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