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Novel Field-Effect Schottky Barrier Transistors Based on Graphene-MoS(2) Heterojunctions
Recently, two-dimensional materials such as molybdenum disulphide (MoS(2)) have been demonstrated to realize field effect transistors (FET) with a large current on-off ratio. However, the carrier mobility in backgate MoS(2) FET is rather low (typically 0.5–20 cm(2)/V·s). Here, we report a novel fiel...
Αποθηκεύτηκε σε:
| Κύριοι συγγραφείς: | , , , , , , , , , , |
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| Μορφή: | Artigo |
| Γλώσσα: | Inglês |
| Έκδοση: |
Nature Publishing Group
2014
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| Θέματα: | |
| Διαθέσιμο Online: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4127518/ https://ncbi.nlm.nih.gov/pubmed/25109609 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep05951 |
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