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Selective etching in graphene–MoS2 heterostructures for fabricating graphene-contacted MoS2 transistors
Semiconducting molybdenum disulfide (MoS2) has drawn a lot of attention for its exceptional electronic and optoelectronic properties. Despite the potential advantages, the large contact resistance at the metal–MoS2 interfaces has been one of the biggest obstacles for the realization of ideal MoS2 tr...
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| Main Authors: | , , , , , , , , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
AIP Publishing LLC
2020-03-01
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| Colecção: | AIP Advances |
| Acesso em linha: | http://dx.doi.org/10.1063/1.5141143 |
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