Cargando...
Electrically Tunable and Negative Schottky Barriers in Multi-layered Graphene/MoS(2) Heterostructured Transistors
We fabricated multi-layered graphene/MoS(2) heterostructured devices by positioning mechanically exfoliated bulk graphite and single-crystalline 2H-MoS(2) onto Au metal pads on a SiO(2)/Si substrate via a contamination-free dry transfer technique. We also studied the electrical transport properties...
Guardado en:
| Publicado en: | Sci Rep |
|---|---|
| Autores principales: | , |
| Formato: | Artigo |
| Lenguaje: | Inglês |
| Publicado: |
Nature Publishing Group
2015
|
| Materias: | |
| Acceso en línea: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4558713/ https://ncbi.nlm.nih.gov/pubmed/26333680 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep13743 |
| Etiquetas: |
Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
|