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Capping Layers to Improve the Electrical Stress Stability of MoS(2) Transistors
Two-dimensional (2D) materials offer exciting possibilities for numerous applications, including next-generation sensors and field-effect transistors (FETs). With their atomically thin form factor, it is evident that molecular activity at the interfaces of 2D materials can shape their electronic pro...
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| Publicado no: | ACS Appl Mater Interfaces |
|---|---|
| Main Authors: | , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
2020
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7895421/ https://ncbi.nlm.nih.gov/pubmed/32805797 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1021/acsami.0c08647 |
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