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Capping Layers to Improve the Electrical Stress Stability of MoS(2) Transistors

Two-dimensional (2D) materials offer exciting possibilities for numerous applications, including next-generation sensors and field-effect transistors (FETs). With their atomically thin form factor, it is evident that molecular activity at the interfaces of 2D materials can shape their electronic pro...

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Detalhes bibliográficos
Publicado no:ACS Appl Mater Interfaces
Main Authors: Doherty, James L., Noyce, Steven G., Cheng, Zhihui, Abuzaid, Hattan, Franklin, Aaron D.
Formato: Artigo
Idioma:Inglês
Publicado em: 2020
Assuntos:
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC7895421/
https://ncbi.nlm.nih.gov/pubmed/32805797
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1021/acsami.0c08647
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