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Improvement of the Bias Stress Stability in 2D MoS(2) and WS(2) Transistors with a TiO(2) Interfacial Layer
The fermi-level pinning phenomenon, which occurs at the metal–semiconductor interface, not only obstructs the achievement of high-performance field effect transistors (FETs) but also results in poor long-term stability. This paper reports on the improvement in gate-bias stress stability in two-dimen...
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| Pubblicato in: | Nanomaterials (Basel) |
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| Autori principali: | , , , , , , , , |
| Natura: | Artigo |
| Lingua: | Inglês |
| Pubblicazione: |
MDPI
2019
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| Soggetti: | |
| Accesso online: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6724147/ https://ncbi.nlm.nih.gov/pubmed/31409001 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/nano9081155 |
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