Uncovering edge states and electrical inhomogeneity in MoS(2) field-effect transistors

The understanding of various types of disorders in atomically thin transition metal dichalcogenides (TMDs), including dangling bonds at the edges, chalcogen deficiencies in the bulk, and charges in the substrate, is of fundamental importance for TMD applications in electronics and photonics. Because...

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Bibliografische gegevens
Gepubliceerd in:Proc Natl Acad Sci U S A
Hoofdauteurs: Wu, Di, Li, Xiao, Luan, Lan, Wu, Xiaoyu, Li, Wei, Yogeesh, Maruthi N., Ghosh, Rudresh, Chu, Zhaodong, Akinwande, Deji, Niu, Qian, Lai, Keji
Formaat: Artigo
Taal:Inglês
Gepubliceerd in: National Academy of Sciences 2016
Onderwerpen:
Physical Sciences
Online toegang:https://ncbi.nlm.nih.gov/pmc/articles/PMC4978287/
https://ncbi.nlm.nih.gov/pubmed/27444021
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1073/pnas.1605982113
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