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Uncovering edge states and electrical inhomogeneity in MoS(2) field-effect transistors
The understanding of various types of disorders in atomically thin transition metal dichalcogenides (TMDs), including dangling bonds at the edges, chalcogen deficiencies in the bulk, and charges in the substrate, is of fundamental importance for TMD applications in electronics and photonics. Because...
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| Publicado no: | Proc Natl Acad Sci U S A |
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| Main Authors: | , , , , , , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
National Academy of Sciences
2016
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4978287/ https://ncbi.nlm.nih.gov/pubmed/27444021 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1073/pnas.1605982113 |
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